inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor irf 360 description silicon gate for fast switching at elevate rugged applications suited for applications such as switching power supplies,motor controls ,inverters, choppers,audio amplifiers and high energy pulse circuits. absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 400 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 25 a p tot total dissipation@tc=25 300 w t j max. operating junction temperature -55~150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 0.42 /w r th j-a thermal resistance,junction to ambient 30 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor irf 360 electrical characteristics (t c =25 ) symbol parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs =0; i d =0.25ma 400 v v gs(th) gate threshold voltage v ds = v gs ; i d =250 a 2 4 v r ds(on) drain-source on-stage resistance v gs =10v; i d =14a 0.2 i gss gate source leakage current v gs = 20v;v ds =0 100 na i dss zero gate voltage drain current v ds =400v; v gs =0 250 ua v sd diode forward voltage i f =25a; v gs =0 1.8 v ciss input capacitance v ds =25v; v gs =0v; f t =1mhz 4000 pf crss reverse transfer capacitance 550 coss output capacitance 97 pdf pdffactory pro www.fineprint.cn
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